Abstract: This study aims to explore the solder fatigue lifetime of a developed high-voltage (1.7 kV/100 A) SiC power MOSFET module for on-board chargers (OBCs) subjected to power cycling test (PCT) ...
Abstract: A split-gate SiC trench MOSFET with a hetero-junction diode (HJD) is proposed and numerically analyzed in this paper. The proposed structure features the HJD to effectively suppress the turn ...
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