Abstract: This article investigates the influence of transverse geometry of sidewall gates on characteristics of AlGaN/GaN Fin-high-electron-mobility transistors (HEMTs) with rectangular HEMTs ...
Abstract: It is well known that inclined sidewall scattering structures can improve the light extraction efficiency (LEE) of micro deep ultraviolet (DUV) light-emitting diodes (LEDs). However, ...
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